Energy Band Gap of PN Junction Diode
Product Code : JA-SCD-1086
The Energy Band Gap of PN Junction Diode apparatus (SKU JA-SCD-1086) is used to plot the reverse saturation current of a reverse-biased PN junction diode against temperature, from which the energy band gap of the semiconductor is found. The diode sits in an oven with a temperature control system and a 100 °C thermometer. A regulated 0-1 V DC, 500 mA supply and two round meters are built in.
Specifications
The listing gives these details:
| Product | Energy Band Gap of PN Junction Diode |
| SKU | JA-SCD-1086 |
| Power supply | Regulated DC, 0-1 V, 500 mA |
| Meters | Two round meters |
| Diode set-up | PN junction diode in oven, temperature control |
| Thermometer | 100 °C |
| Size | 10 x 8 x 5 in |
Scope of supply and ordering
One apparatus per order line. Quantities and packing are confirmed on the quotation.
Frequently asked questions
How is the band gap found with this apparatus?
From the plot of reverse saturation current against temperature for the reverse-biased diode.
How is the diode heated?
In an oven with a temperature control system, read on a 100 °C thermometer.
Related products
- Resistivity of Semiconductors by Four Probe Method at Different Temperatures and Determination of Band-Gap
- Semiconductor Diode and PN Junction Diode Apparatus
- Thermistor Characteristics Apparatus
- Hall Effect Experiment
Semiconductor apparatus is listed in our scientific instrument range.
Request a quote
For the energy band gap apparatus, send the quantity via our contact page. Buying under a laboratory tender? Use our tenders page.
